IndiumV3, Russie, Analysis, bibRecord, 000848

Comment on: Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1). Authors' reply

Identifieur interne : 000848 ( Russie/Analysis ); précédent : 000847; suivant : 000849

Comment on: Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1). Authors' reply

Auteurs : RBID : Pascal:03-0042748

Descripteurs français

Pascal (Inist)
- Bande interdite, Effet composition, Photoluminescence, Indium nitrure, Semiconducteur, Composé ternaire, Gallium nitrure, In N, InN, Ga In N, InxGa1-xN, 7855C, 7820B.

English descriptors

KwdEn :
- Composition effect, Energy gap, Gallium nitrides, Indium nitrides, Photoluminescence, Semiconductor materials, Ternary compounds.

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Pascal:03-0042748

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Comment on: Band gap of InN and In-rich In<sub>x</sub>
Ga<sub>1-x</sub>
N alloys (0.36 < x < 1). Authors' reply</title>
<author><name sortKey="Nag, B R" uniqKey="Nag B">B. R. Nag</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Radio Physics and Electronics, 92 Acharya Prafulla Chandra Road</s1>
<s2>Kolkata-700009</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
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<country>Inde</country>
<wicri:noRegion>Kolkata-700009</wicri:noRegion>
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</author>
<author><name sortKey="Davydov, V Yu" uniqKey="Davydov V">V. Yu. Davydov</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute, Russian Academy of Science, Polytekhnicheskaya 26</s1>
<s2>194021 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Klochikhin, A A" uniqKey="Klochikhin A">A. A. Klochikhin</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute, Russian Academy of Science, Polytekhnicheskaya 26</s1>
<s2>194021 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Emtsev, V V" uniqKey="Emtsev V">V. V. Emtsev</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute, Russian Academy of Science, Polytekhnicheskaya 26</s1>
<s2>194021 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>194021 St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bechstedt, F" uniqKey="Bechstedt F">F. Bechstedt</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1</s1>
<s2>07743 Jena</s2>
<s3>DEU</s3>
<sZ>5 aut.</sZ>
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<country>Allemagne</country>
<wicri:noRegion>07743 Jena</wicri:noRegion>
<wicri:noRegion>Max-Wien-Platz 1</wicri:noRegion>
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</author>
<author><name sortKey="Mudryi, A V" uniqKey="Mudryi A">A. V. Mudryi</name>
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<s3>BLR</s3>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Biélorussie</country>
<wicri:noRegion>220072 Minsk</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Haller, E E" uniqKey="Haller E">E. E. Haller</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>University of California and Lawrence Berkeley National Laboratory</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>University of California and Lawrence Berkeley National Laboratory</wicri:noRegion>
</affiliation>
</author>
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<publicationStmt><idno type="inist">03-0042748</idno>
<date when="2002">2002</date>
<idno type="stanalyst">PASCAL 03-0042748 INIST</idno>
<idno type="RBID">Pascal:03-0042748</idno>
<idno type="wicri:Area/Main/Corpus">00DF66</idno>
<idno type="wicri:Area/Main/Repository">00F765</idno>
<idno type="wicri:Area/Russie/Extraction">000848</idno>
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<seriesStmt><idno type="ISSN">0370-1972</idno>
<title level="j" type="abbreviated">Phys. status solidi, B, Basic res.</title>
<title level="j" type="main">Physica status solidi. B. Basic research</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Composition effect</term>
<term>Energy gap</term>
<term>Gallium nitrides</term>
<term>Indium nitrides</term>
<term>Photoluminescence</term>
<term>Semiconductor materials</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Bande interdite</term>
<term>Effet composition</term>
<term>Photoluminescence</term>
<term>Indium nitrure</term>
<term>Semiconducteur</term>
<term>Composé ternaire</term>
<term>Gallium nitrure</term>
<term>In N</term>
<term>InN</term>
<term>Ga In N</term>
<term>InxGa1-xN</term>
<term>7855C</term>
<term>7820B</term>
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<fA08 i1="01" i2="1" l="ENG"><s1>Comment on: Band gap of InN and In-rich In<sub>x</sub>
Ga<sub>1-x</sub>
N alloys (0.36 < x < 1). Authors' reply</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>NAG (B. R.)</s1>
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<fA11 i1="02" i2="1"><s1>DAVYDOV (V. Yu.)</s1>
<s9>comment.</s9>
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<fA11 i1="03" i2="1"><s1>KLOCHIKHIN (A. A.)</s1>
<s9>comment.</s9>
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<fA11 i1="04" i2="1"><s1>EMTSEV (V. V.)</s1>
<s9>comment.</s9>
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<fA11 i1="05" i2="1"><s1>BECHSTEDT (F.)</s1>
<s9>comment.</s9>
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<fA11 i1="06" i2="1"><s1>MUDRYI (A. V.)</s1>
<s9>comment.</s9>
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<fA11 i1="07" i2="1"><s1>HALLER (E. E.)</s1>
<s9>comment.</s9>
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<fA14 i1="01"><s1>Institute of Radio Physics and Electronics, 92 Acharya Prafulla Chandra Road</s1>
<s2>Kolkata-700009</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Ioffe Physico-Technical Institute, Russian Academy of Science, Polytekhnicheskaya 26</s1>
<s2>194021 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1</s1>
<s2>07743 Jena</s2>
<s3>DEU</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Institute of Solid State and Semiconductor Physics, Belarus Academy of Sciences, Brovki 17</s1>
<s2>220072 Minsk</s2>
<s3>BLR</s3>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="05"><s1>University of California and Lawrence Berkeley National Laboratory</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
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<fA20><s2>R8-R9</s2>
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<fA21><s1>2002</s1>
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</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>10183B</s2>
<s5>354000106552160020</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2003 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>10 ref.</s0>
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<fA47 i1="01" i2="1"><s0>03-0042748</s0>
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<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Physica status solidi. B. Basic research</s0>
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<fC02 i1="01" i2="3"><s0>001B70H55C</s0>
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<fC02 i1="02" i2="3"><s0>001B70H20B</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Bande interdite</s0>
<s5>02</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Energy gap</s0>
<s5>02</s5>
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<fC03 i1="02" i2="X" l="FRE"><s0>Effet composition</s0>
<s5>03</s5>
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<fC03 i1="02" i2="X" l="ENG"><s0>Composition effect</s0>
<s5>03</s5>
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<fC03 i1="02" i2="X" l="SPA"><s0>Efecto composición</s0>
<s5>03</s5>
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<fC03 i1="03" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>04</s5>
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<fC03 i1="04" i2="3" l="FRE"><s0>Indium nitrure</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Indium nitrides</s0>
<s2>NK</s2>
<s5>15</s5>
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<fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>16</s5>
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<fC03 i1="05" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>16</s5>
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<fC03 i1="06" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>17</s5>
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<fC03 i1="06" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>17</s5>
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<fC03 i1="07" i2="3" l="FRE"><s0>Gallium nitrure</s0>
<s2>NK</s2>
<s5>18</s5>
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<fC03 i1="07" i2="3" l="ENG"><s0>Gallium nitrides</s0>
<s2>NK</s2>
<s5>18</s5>
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<fC03 i1="08" i2="3" l="FRE"><s0>In N</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>InN</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Ga In N</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>InxGa1-xN</s0>
<s4>INC</s4>
<s5>55</s5>
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<fC03 i1="12" i2="3" l="FRE"><s0>7855C</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
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<fC03 i1="13" i2="3" l="FRE"><s0>7820B</s0>
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<s5>57</s5>
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<s5>48</s5>
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<s5>48</s5>
</fC07>
<fN21><s1>020</s1>
</fN21>
<fN82><s1>PSI</s1>
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</inist>
</record>

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   |wiki=   *** parameter Area/wikiCode missing *** 
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   |texte=   Comment on: Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1). Authors' reply
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Comment on: Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1). Authors' reply

Comment on: Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1). Authors' reply

Descripteurs français

English descriptors

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri